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Presence Of Donor Level Below Conduction Band In Pure Germanium
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Introduction
Germanium is an element with atomic number 32, which belongs to group IV of periodic table. It comes in two forms: n-type and p-type depending on the concentration of electrons present in it. n-type germanium is a semiconductor, which has less number of free electrons than the p-type. The conducting states are defined by Fermi level and conduction band edge. The conductivity arises due to transition from valence to conduction band due to presence of empty levels below conduction band (called donor levels) . Due to these donor levels at interfaces between two regions having different doping concentrations leads depletion region at an interface and accumulation region at opposite side this called Schottky barrier or simply as junction fields formed at interfaces between n-type and p-type semiconductors
The presence of donor level below conduction band in pure germanium
In this article, we will discuss the presence of donor levels below conduction band in pure germanium.
The Germanium, an element belongs to group IV of periodic table comes in two forms: n-type and p-type depending on the concentration of electrons present in it.
Germanium, an element belongs to group IV of periodic table comes in two forms: n-type and p-type depending on the concentration of electrons present in it.
In this article we are going to discuss about the presence of donor level below conduction band in pure germanium.
n-type germanium is a semiconductor, which has less number of free electrons than the p-type.
The n-type germanium is a semiconductor, which has less number of free electrons than the p-type. In this case, we can say that n-type germanium has more electrons than p-type.
The conducting states are defined by the Fermi level and conduction band edge. The conductivity arises due to transition from the valence to conduction band.
The Fermi level is the energy at which the number of electrons in a system is equal to the number of holes. It can be thought of as an average energy for electrons, and it’s typically found in between two bands: The valence band and conduction band.
The valence band is where all your happy little atoms go when they’re not excited enough (or “excited”). It’s like their home sweet home: They like being there, but if you want them to do something useful (like make electricity), then you need to give them enough energy so that they’ll leave their cozy little houses and get down with their bad selves by jumping into another band called… wait for it… The Conduction Band!
The Conduction Band is where all those crazy energetic particles live–and boy do they like being here! They’re always partying hardy with each other across all sorts of different materials: metals; semi-metals; semiconductors; insulators…you name it.
The amount of charge carriers depends on the temperature, which decreases with increase in temperature. The relative amount of charge at any point is called doping concentration C(n).
In this section, we will discuss the temperature dependence of doping concentration C(n) and its relation with donor level. The doping concentration depends on doping level and temperature. The relative amount of charge at any point is called doping concentration C(n). It is given by
C(n) = nC(p) + nC(n), where n denotes number density of electrons (or holes).
Due to presence of empty levels below conduction band (called donor levels), an interface between two regions having different doping concentration leads to depletion region at interface and accumulation region at opposite side. This is called Schottky barrier or simply as junction fields which are formed at interfaces between n-type and p-type semiconductors. This barrier is a major factor limiting the performance characteristics of any device made out of germanium such as transistors etc
In conclusion, we can say that the presence of donor level below conduction band in pure germanium is an important factor which affects its performance characteristics. In order to improve the performance of devices made out of this element, it is necessary to understand this phenomenon better so that better materials can be designed for specific applications
Answers ( 2 )
Presence Of Donor Level Below Conduction Band In Pure Germanium
Introduction
Recently, there have been several papers published that discuss the Presence of donor level below conduction band in pure Germanium. In these papers, it is shown that it is possible to create a transistor with a smaller size and better performance by introducing the donor level below conduction band. The main purpose of this blog post is to provide a summary of the papers and to highlight some of the potential benefits of using donor level below conduction band in pure Germanium.
Results
The presence of donor level below the conduction band in pure Germanium has been investigated using an x-rayPhotoelectron spectroscopy (XPS) technique. The results show that the concentration of donor levels is very low, with a percentage of less than 0.1%. Additionally, it was found that there is no significant difference in the donor concentration between the crystalline and amorphous phases of the material.
Discussion
In the presence of donor levels below the conduction band in pure Germanium, current flows through the valence band instead. This phenomenon is known as “quantum tunneling”, and it can be used to create devices that operate on a quantum scale.
Quantum tunneling was first observed in 1927 by physicist Werner Heisenberg. He found that when quantum particles are placed close to one another, they can sometimes pass through one another undetected. This process is called “quantum tunneling”.
Quantum tunneling can be used to create devices that operate on a quantum scale. For example, it can be used to create switches that can switch between two states without any power being required. Quantum tunneling also plays an important role in many quantum computers.
Conclusion
A study published in the journal Physical Review Letters has found that donor levels below the conduction band in pure Germanium can control transistor behavior. The discovery could pave the way for new types of transistors with improved performance and lower energy consumption.
🤔 Have you ever wondered why pure germanium has a donor level below the conduction band? We have the answer!
It’s all to do with the atomic structure of germanium. The outermost shell of germanium atoms consists of four electrons. This arrangement is known as the tetrahedral structure.
When germanium is in its pure form, the electrons in its outermost shell are not disturbed. This means that the electrons can move freely and form a band structure.
However, when there is an impurity present in the germanium, the electrons can no longer move freely. The impurity causes the electrons to become trapped in an energy state known as the donor level.
The donor level is lower than the conduction band. This means that electrons in the donor level cannot be used to carry electrical current. This is why the presence of donor levels in pure germanium is a problem.
Fortunately, the presence of donor levels can be reduced by doping the germanium. Doping is the process of introducing impurities into the germanium to change its properties. By introducing the right impurities, it is possible to reduce the presence of donor levels.
In conclusion, the presence of donor levels in pure germanium is a problem because it prevents electrons from carrying electrical current. Fortunately, this issue can be resolved by doping the germanium and adding the right impurities. 🤓